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Product Detailed Parameters
- Description：DIODE MODULE GP 400V 50A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MUR10040CTR is a silicon super fast recovery diode module featuring a twin tower package. It provides a repetitive peak reverse voltage of 400 V and an average forward current rating of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.3 V at 50 A and a maximum reverse recovery time of 90 ns. Thermal resistance from junction to case is 1.0 °C/W per leg. Operating and storage temperatures range from -55°C to 150°C.
Feature Summary
- High surge capability with a peak forward surge current of 1500 A per leg.
- Twin tower package design for efficient mounting.
- Not ESD sensitive.
Applications
- High frequency switching power supplies
- DC-DC converters
- Inverter circuits
Procurement Notes
Verify the specific suffix 'CTR' against official documentation, as datasheets indicate this suffix denotes reversed leads compared to the standard CT configuration. Confirm lead orientation requirements prior to integration into PCB layouts or heatsink assemblies to ensure correct polarity alignment.
Selection Notes
Select this component for applications requiring high efficiency and fast switching speeds. The low reverse recovery time minimizes switching losses. Ensure thermal management strategies account for the specified junction-to-case thermal resistance to maintain operation within the 150°C maximum junction temperature limit under load.
Part Context
This part belongs to the MUR100 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MUR10060CT rated for 600 V. These modules are designed for robust performance in demanding power electronics environments.
Replacement Considerations
Public confirmed substitute part numbers: None identified in verified source material.
FAQ
What does the 'R' suffix indicate in the MUR10040CTR designation?
The 'R' suffix indicates that the device has reversed leads compared to the standard configuration.
What is the maximum reverse recovery time for this diode?
The maximum reverse recovery time is 90 ns.
Is this component sensitive to electrostatic discharge?
No, the component is not ESD sensitive.
