MUR20020CTR

MUR20020CTR

$72.05
  • Description:DIODE MODULE GP 200V 100A 2TOWER
  • Series:-

SKU:698ecb6216d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 200V 100A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

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MUR20020CTR

Overview

The MUR20020CTR is a silicon super fast recovery diode module from the MUR200 series, manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation and supports an average forward current of 200 A per leg. The device offers a repetitive peak reverse voltage range up to 200 V, with a maximum instantaneous forward voltage of 1.0 V at 100 A. It exhibits a maximum reverse recovery time of 75 ns and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • High surge capability with a peak forward surge current rating of 2000 A per leg.
  • Non-ESD sensitive design suitable for robust industrial environments.
  • Twin Tower package configuration providing efficient thermal dissipation.

Applications

  • High frequency inverters
  • Free wheeling circuits
  • Polarity protection applications

Procurement Notes

Verify the specific part number suffix against official documentation, as variations may exist between standard and reversed lead configurations. Confirm that the component meets required RoHS compliance standards before integration. Ensure proper handling procedures are followed during installation to maintain the integrity of the screw mount terminals and the Twin Tower housing structure.

Selection Notes

Select this module for applications requiring high average forward current and fast switching speeds. The 75 ns reverse recovery time makes it suitable for high-frequency operations. Verify that the system's thermal management can handle the specified junction-to-case thermal resistance. Ensure the operating voltage does not exceed the 200 V repetitive peak reverse voltage limit under all transient conditions.

Part Context

This component belongs to the MUR200 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings, such as 50 V, 100 V, and 200 V options. All models in this family share similar physical dimensions and electrical characteristics regarding current capacity and recovery speed, differing primarily in their blocking voltage specifications.

Replacement Considerations

Direct substitutes include other MUR200 series modules like the MUR20020CT. When replacing, ensure the new component matches the Twin Tower package type and screw mount requirements. Verify that the replacement maintains the same 200 A current rating and 75 ns reverse recovery time to preserve circuit performance.

FAQ

What is the difference between the MUR20020CT and MUR20020CTR?

The 'R' designation indicates that the leads on the device are reversed compared to the standard CT version. The electrical characteristics remain identical.

Is the MUR20020CTR sensitive to electrostatic discharge?

No, the datasheet explicitly states that the device is not ESD sensitive.

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance (RθJC) per leg is 0.45 °C/W.

MUR20020CTRMUR20020CTR
$72.05
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