MUR20040CTR

Overview

The GeneSiC Semiconductor MUR20040CTR is a silicon super fast recovery diode module featuring a Twin Tower package. It provides an average forward current of 200 A per leg and supports repetitive peak reverse voltages ranging from 400 V to 600 V. The device exhibits a maximum reverse recovery time of 90 ns and a thermal resistance of 0.45 °C/W per leg. Operating temperatures range from -55 °C to +150 °C. The 'R' suffix indicates reversed leads compared to the standard configuration.

Feature Summary

• High surge capability with a peak forward surge current rating of 2000 A per leg
• Twin Tower package design for efficient mounting and thermal management
• Not ESD sensitive, ensuring robust handling during assembly

Applications

• High frequency switching power supplies
• Induction heating systems
• DC-DC converters requiring fast recovery characteristics

Procurement Notes

Verify the specific voltage variant required, as the series spans 400 V to 600 V. Confirm lead orientation requirements due to the reversed terminal configuration associated with the 'R' suffix. Ensure compatibility with screw mount hardware suitable for the Twin Tower package dimensions. Check for RoHS compliance status in the latest manufacturer documentation before finalizing orders.

Selection Notes

Select this component when high current capacity and rapid switching speeds are critical. The low thermal resistance facilitates effective heat dissipation in compact designs. Consider the 2000 A surge rating for applications with significant inrush currents. Evaluate the operating temperature range against the expected ambient conditions of the target system.

Part Context

This part belongs to the MUR20040CT through MUR20060CTR series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package structure designed for high-power applications. The product line offers various voltage ratings within the same physical footprint to simplify inventory management.

Replacement Considerations

Direct substitutes include other 200 A super fast recovery diode modules with identical Twin Tower pinouts. Verify that replacement parts match the 90 ns reverse recovery time and 0.45 °C/W thermal resistance specifications. Ensure the alternative component supports the same 400 V or higher repetitive peak reverse voltage requirement.