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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 100A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：110 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Download product information
Overview
The GeneSiC Semiconductor MUR20060CT is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 200 A per package. It features a twin tower screw-mount package with a maximum thermal resistance of 0.45 °C/W per leg. The device supports a peak forward surge current of 2000 A and exhibits a maximum reverse recovery time of 110 ns. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Twin tower package configuration for efficient mounting
- Not sensitive to electrostatic discharge
Applications
- High frequency switching circuits
- Free-wheeling rectification in inverters
- Snubber circuits for high voltage protection
Procurement Notes
Verify the specific suffix designation, as devices marked with (R) feature reversed leads compared to standard configurations. Confirm that the procurement channel provides original manufacturer documentation matching the electrical characteristics listed in the official datasheet to ensure component authenticity and performance compliance.
Selection Notes
Select this component when a 600 V rating and 200 A continuous current capacity are required within a twin tower form factor. Ensure the application environment remains within the specified -55 °C to +150 °C junction temperature range. Verify lead orientation requirements, particularly if utilizing the (R) variant which has reversed terminal connections.
Part Context
This module belongs to the MUR200 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 400 V to 600 V reverse voltage ratings, all sharing the same 200 A current handling capability and twin tower packaging structure for standardized integration into power electronics systems.
Replacement Considerations
MUR20040CT
FAQ
What is the maximum thermal resistance for the MUR20060CT?
The maximum thermal resistance from junction to case is 0.45 °C/W per leg.
How does the (R) suffix affect the physical installation?
Devices with the (R) suffix have reversed leads compared to the standard configuration, requiring verification during PCB layout or mounting.
Is the MUR20060CT sensitive to electrostatic discharge?
No, the component is explicitly documented as not being ESD sensitive.
