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Product Detailed Parameters
- Description：DIODE MODULE GP 1200V 30A SOT227
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：2 Independent
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：2.35 V @ 30 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：85 ns
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-65°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The MUR2X030A12 is a super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features a maximum repetitive peak reverse voltage of 1200 V and an average forward current rating of 60 A per package. The device operates within a junction temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum instantaneous forward voltage of 2.35 V at 30 A, a peak forward surge current of 400 A per leg, and a maximum reverse recovery time of 85 ns. The module utilizes an electrically isolated SOT-227 package with a base plate isolation voltage of 2500 V.
Feature Summary
- Super fast recovery rectifier technology for high-speed switching applications
- Electrically isolated base plate providing enhanced safety and thermal management
- High surge current capability designed for robust power circuit protection
Applications
- High-frequency DC-DC converters
- Uninterruptible Power Supply (UPS) systems
- Industrial motor drives and inverters
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as distribution channels may vary. Confirm that the received unit matches the SOT-227 package dimensions and terminal configuration provided in the official datasheet. Ensure compliance with the specified operating temperature limits during installation to maintain performance integrity.
Selection Notes
Select this module for designs requiring high voltage blocking capabilities combined with moderate current handling. The dual parallel configuration allows for efficient heat dissipation through the isolated base plate. Consider the 85 ns reverse recovery time when evaluating switching losses in high-frequency topologies compared to standard recovery diodes.
Part Context
This component belongs to the MUR series of super fast recovery rectifiers from GeneSiC Semiconductor. The series is engineered for demanding power electronics environments where rapid switching and high reliability are critical. The MUR2X030A12 specifically addresses needs for compact, high-voltage rectification solutions in industrial and commercial power conversion equipment.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains the 1200 V reverse voltage rating and compatible SOT-227 footprint.
