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The MUR2X100A12 is a super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features an average forward current of 200 A and a maximum repetitive peak reverse voltage of 1200 V. The device utilizes an SOT-227 isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 2.35 V per leg, a peak forward surge current of 1600 A, and a maximum reverse recovery time of 125 ns. The operating temperature range extends from -55 °C to +175 °C.
Verify the manufacturer designation on official documentation, as some distributor listings may incorrectly attribute this component to Navitas Semiconductor due to corporate acquisitions. Confirm the specific datasheet version matches the required thermal resistance and packaging details before finalizing procurement orders.
Select this component for applications requiring high voltage blocking capabilities combined with significant current handling in a compact form factor. The SOT-227 package facilitates screw mounting, which is suitable for high-power thermal management requirements. Ensure the system design accounts for the specified junction-to-case thermal resistance to maintain safe operating temperatures.
This part belongs to the MUR series of super fast recovery rectifiers produced by GeneSiC Semiconductor. The series is designed for high-efficiency switching applications where rapid recovery characteristics are critical. The MUR2X100A12 specifically addresses needs for high voltage and high current density in industrial power electronics.
Consult official cross-reference lists for verified substitutes. Generic replacements must match the 1200 V rating, 200 A current capacity, and SOT-227 package dimensions to ensure mechanical and electrical compatibility.