MUR30060CT

Overview

The GeneSiC Semiconductor MUR30060CT is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 300 A. It features a maximum instantaneous forward voltage of 1.7 V and a maximum reverse recovery time of 150 ns. The device operates within a junction temperature range of -55 to +150 °C, with a thermal resistance from junction to case of 0.40 °C/W per leg.

Feature Summary

• High surge capability designed for demanding power applications
• Utilizes Twin Tower package configuration for efficient mounting

Applications

• High frequency inverters
• Free wheeling circuits
• Polarity protection systems

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal orientation and exact electrical tolerances. Confirm availability status as discontinuation notices may apply to this component series. Ensure compatibility with existing thermal management solutions given the specified junction-to-case thermal resistance values.

Selection Notes

Select this module when high current handling and rapid switching speeds are required in power conversion topologies. Evaluate the 600 V blocking voltage against system transients to ensure adequate safety margins. Consider the Twin Tower form factor for mechanical integration constraints and screw-mount installation requirements.

Part Context

This component belongs to the MUR300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings ranging from 400 V to 600 V, all sharing the same 300 A current rating and physical package dimensions.

Replacement Considerations

MUR30060CTR serves as a related variant within the same product family.