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The MUR3040PT is a dual ultrafast silicon rectifier diode in a TO-218AC package. It features a peak repetitive reverse voltage of 400V and an average rectified forward current of 15A per leg at a case temperature of 145°C. The maximum non-repetitive peak surge current is 200A, with a maximum power dissipation of 100W. Reverse recovery time is less than 55ns, and the junction-to-case thermal resistance is 1.5°C/W. Maximum operating and storage temperatures range from -55°C to 175°C.
Verify the manufacturer origin, as the component was originally developed by Fairchild Semiconductor and is now part of onsemi. Confirm that the ordering suffix matches the specific datasheet revision required for your design. Ensure the TO-218AC package dimensions align with your PCB footprint requirements before finalizing procurement.
Select this component when low stored charge and fast recovery are critical for reducing switching losses. The common cathode configuration supports single-phase applications requiring two independent legs. Consider the 175°C maximum junction temperature for high-temperature environments where standard silicon limits may be exceeded.
This device belongs to the MUR series of ultrafast recovery diodes, designed specifically for high-frequency power conversion. It shares architectural similarities with the RURH1540CC within the same datasheet but differs in packaging and branding conventions established during the transition from Fairchild to onsemi.
MUR3060PT (600V rating)
The reverse recovery time is less than 55ns under standard test conditions.
The junction-to-case thermal resistance is specified as 1.5°C/W.