MUR40005CTR

$65.93

Description：DIODE MODULE GP 50V 200A 2TOWER
Series：-

SKU:5b31514a2e7c Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 50V 200A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：50 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 125 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：90 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR40005CTR

Overview

The GeneSiC Semiconductor MUR40005CTR is a silicon super fast recovery diode module housed in a Twin Tower package. It features a repetitive peak reverse voltage of 50 V and an average forward current rating of 400 A per package. The device supports a peak forward surge current of 3300 A per leg with a maximum reverse recovery time of 150 ns. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

High surge capability design for robust performance under transient conditions
Twin Tower package configuration for efficient thermal management
Super fast recovery characteristics suitable for high-frequency switching applications

Applications

Industrial power supplies
Inverter circuits
DC-DC converters

Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm terminal lead orientation, as datasheets indicate reversed leads for 'R' variants. Confirm RoHS compliance status through manufacturer specifications before procurement. Ensure thermal interface materials are compatible with the specified junction-to-case thermal resistance values for proper heat dissipation.

Selection Notes

Select this component when high average current handling and fast recovery times are required in low-voltage applications. Evaluate the 50 V reverse voltage rating against circuit peak voltages to ensure adequate safety margins. Consider the Twin Tower package dimensions for mechanical fit and verify that the 0.35 °C/W thermal resistance meets the system's cooling requirements.

Part Context

This module belongs to the MUR400 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current and thermal characteristics. The Twin Tower packaging provides a standardized form factor for easy integration into existing power electronics designs requiring high reliability.