MUR40020CTR

Overview

The GeneSiC Semiconductor MUR40020CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 400 A per package. It features a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A, and a maximum reverse recovery time of 150 ns. The device operates within a junction temperature range of -55 °C to +150 °C and utilizes a Twin Tower screw mount package.

Feature Summary

• High surge capability with a peak forward surge current rating of 3300 A
• Super fast recovery characteristics with a maximum reverse recovery time of 150 ns
• Twin Tower package design for efficient thermal management

Applications

• High frequency power conversion circuits
• Industrial motor drive systems
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm availability status. Check for any recent product discontinuation notifications or lifecycle changes directly from the supplier. Ensure that the procurement channel provides valid traceability and authenticity guarantees for this component.

Selection Notes

Select this module when a high current capacity of 400 A is required alongside a 200 V blocking voltage. Consider the 150 ns reverse recovery time for applications demanding faster switching speeds compared to standard recovery diodes. Evaluate the thermal resistance of 0.35 °C/W per leg for heat sink compatibility in the final assembly.

Part Context

This component belongs to the MUR400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 400 A current rating across models. The CTR suffix indicates a specific terminal configuration variant within this product family.

Replacement Considerations

MUR40020CT is the non-lead equivalent counterpart within the same datasheet specifications.