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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 200A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 125 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：180 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR40060CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with an average forward current rating of 400 A and a repetitive peak reverse voltage of 600 V. The device supports a maximum thermal resistance junction-to-case of 0.35 °C/W per leg. Electrical characteristics include a maximum instantaneous forward voltage of 1.7 V at 25 °C and a maximum reverse recovery time of 240 ns. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Twin Tower package design for efficient mounting and heat dissipation
- Super fast recovery silicon technology for high-frequency applications
Applications
- High-power DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific suffix designation against official documentation, as variations may exist within the MUR400 series. Confirm terminal configuration details prior to integration. Ensure compliance with RoHS requirements if applicable to the project specifications. Cross-reference datasheet revisions to confirm electrical parameter consistency.
Selection Notes
Select this component based on the required 600 V blocking voltage and 400 A continuous current capacity. Evaluate the thermal management strategy considering the specified junction-to-case thermal resistance. Verify that the operating temperature range meets the environmental constraints of the target application.
Part Context
This module belongs to the MUR400 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings, such as 400 V and 600 V options. These modules are designed for high-performance power conversion applications requiring low reverse recovery charge and high reliability.
Replacement Considerations
Direct substitutes within the same series include the MUR40040CT, which shares identical current ratings but offers a lower 400 V reverse voltage rating. Designers must verify voltage headroom compatibility when considering alternative models in the MUR400 family.
