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The MURD620CTH is a silicon ultrafast rectifier manufactured by onsemi, featuring a dual common cathode configuration housed in a TO-252 (DPAK) surface-mount package with three pins. It supports a maximum repetitive peak reverse voltage of 200 V and an average forward current of 6 A per diode leg. The device exhibits a peak non-repetitive forward surge current capability of 50 A and a typical peak reverse recovery time of 35 ns. Operating parameters include a maximum forward voltage of 1.2 V at rated current, a reverse leakage current of 1 uA, and a junction temperature range from -65°C to 175°C.
Verify the specific suffix 'H' against official manufacturer documentation to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance status distinct from the standard 'T4G' designation. Ensure the component matches the required RoHS and REACH standards for your assembly process. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement specifications.
Select this component when designing circuits requiring fast recovery times to minimize switching losses and electromagnetic interference. The TO-252 package offers a balance between thermal performance and board space efficiency for medium-power applications. Evaluate the 200 V rating against peak transient voltages in the target system to ensure adequate safety margins during operation.
This part belongs to the MURD series of ultrafast rectifiers from onsemi, engineered for general-purpose power rectification in demanding environments. The series utilizes advanced plastic encapsulation techniques to provide robust mechanical stability and reliable electrical performance under high-temperature conditions typical of modern electronic equipment.
Publicly confirmed substitute part numbers are not available in the provided source material.