MURF10060

MURF10060

$37.40
  • Description:DIODE MODULE GP 600V 50A TO244AB
  • Series:-

SKU:76c36419d42a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 50A TO244AB
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):50A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 50 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:TO-244AB
  • Supplier Device Package:TO-244AB
  • Grade:-
  • Qualification:-

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MURF10060

Overview

The MURF10060 is a super fast recovery silicon rectifier manufactured by GeneSiC Semiconductor. It features a metal-semiconductor junction with guard ring and epitaxial construction. The device is designed for low voltage, high frequency applications including inverters, free wheeling circuits, and polarity protection. It offers low forward voltage drop and low switching losses with high surge capability. The plastic material carries UL recognition 94V-0.

Feature Summary

  • Super fast recovery silicon rectifier technology
  • Metal-semiconductor junction with guard ring
  • Epitaxial construction for enhanced performance
  • Low forward voltage drop and low switching losses

Applications

  • Low voltage high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits

Procurement Notes

Verify the manufacturer designation carefully as listings may attribute this part to Navitas Semiconductor or other entities due to corporate acquisitions. Confirm the specific datasheet version matches the required electrical characteristics. Ensure the component meets the necessary safety standards such as UL 94V-0 flammability rating for the intended enclosure environment.

Selection Notes

Select this component for designs requiring super fast recovery characteristics in low voltage environments. The epitaxial construction supports high surge capabilities suitable for inductive load switching. Consider the thermal management requirements associated with the specific package type and operating temperature range defined in the official specification sheet.

Part Context

This component belongs to the MURF series of super fast recovery rectifiers from GeneSiC Semiconductor. It is distinct from standard bridge rectifiers like the DB or GBU series also listed in distributor catalogs. The MURF series focuses on individual diode performance for high frequency conversion rather than full-wave bridge configurations.

MURF10060MURF10060
$37.40
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