MURF40010R

Overview

The MURF40010R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation, designed for high-current applications. The device has a repetitive peak reverse voltage of 100 V and a maximum average forward current of 200 A. The forward voltage is specified at 1.3 V. Operating temperatures range from -55 °C to +150 °C. This component belongs to the MUR400 series.

Feature Summary

• Super fast recovery technology for efficient rectification
• Electrically isolated base plate in Twin Tower package
• High surge capability for robust performance

Applications

• High-current power rectification
• Industrial power supplies
• Inverter circuits

Procurement Notes

Verify availability status as this component may be subject to discontinuation or limited supply. Confirm manufacturer details, specifically checking for GeneSiC Semiconductor or Navitas Semiconductor branding variations. Ensure the Twin Tower package and screw mount style match system requirements before procurement.

Selection Notes

Select this module for applications requiring high average forward current up to 200 A and low forward voltage drop. The electrically isolated base plate facilitates thermal management and mounting flexibility. Consider the operating temperature range and surge capability when designing for harsh environments.

Part Context

This part belongs to the MUR400 series of silicon super fast recovery diodes. It shares design characteristics with other modules in the series, such as the MURT40040, but differs in voltage ratings and specific package configurations like the Twin Tower form factor.

Replacement Considerations

Check for direct substitutes within the MUR400 series or compatible high-current diode modules. Verify electrical parameters including reverse voltage and forward current ratings to ensure compatibility with existing circuit designs.