MURF40040R

Description：DIODE MODULE GP 400V 200A TO-244
Series：-

SKU:16f8a429a1f9 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 400V 200A TO-244
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：400 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 200 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：180 ns
Current - Reverse Leakage @ Vr：25 µA @ 400 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：TO-244AB
Supplier Device Package：TO-244
Grade：-
Qualification：-

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MURF40040R

Overview

The MURF40040R is a silicon super fast recovery rectifier diode manufactured by GeneSiC Semiconductor. It features a common anode configuration with two elements, rated for a repetitive peak reverse voltage of 400V and a maximum average forward current of 150A. The device utilizes a screw mount installation style within a twin tower base package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 2750A and a maximum forward voltage of 1.3V. It operates reliably within a junction temperature range from -55°C to 175°C.

Feature Summary

Super fast recovery silicon technology for high-speed switching applications
Common anode dual element configuration for bridge or full-wave circuits
High thermal stability with a maximum operating junction temperature of 175°C
Robust surge current capability up to 2750A

Applications

Industrial power supplies
Inverter circuits
DC-DC converters

Procurement Notes

Verify the manufacturer designation carefully, as the MURTA30040R part number appears in databases associated with both Daco Semiconductor and GeneSiC Semiconductor. Confirm that the specific GeneSiC Semiconductor datasheet matches the required 150A rating and 400V blocking voltage before procurement. Ensure the twin tower base package and screw mounting terminals are compatible with the intended heatsink assembly.

Selection Notes

Select this component when a common anode rectifier is required for high-current applications. The 150A continuous current rating and 400V reverse voltage make it suitable for medium-to-high power conversion systems. Consider the 1.3V forward voltage drop for thermal management calculations. Verify that the 175°C maximum junction temperature meets the ambient operating conditions of the final equipment design.

Part Context

This component belongs to the MURF series of silicon super fast recovery diodes produced by GeneSiC Semiconductor. These devices are designed to replace standard recovery diodes in applications requiring faster switching speeds and reduced reverse recovery charge. The twin tower base package allows for efficient mounting to cold plates or heatsinks in industrial environments.