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The MURF40060R is a silicon super fast recovery rectifier diode module manufactured by GeneSiC Semiconductor. It features a dual-common cathode configuration housed in an electrically isolated Three Tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 600 V and a forward current of 400 A. Key electrical parameters include a maximum RMS reverse voltage of 424 V, a DC blocking voltage of 600 V, and a forward voltage of 1.7 V at 200 A. The operating temperature range spans from -55 °C to +150 °C.
Verify the specific suffix 'R' indicates reversed leads as documented for this series. Confirm component status as obsolete or end-of-life through official manufacturer notifications prior to procurement. Ensure thermal management aligns with the specified junction temperature limits during operation.
Select this component for high-current applications requiring fast recovery characteristics. The dual-common cathode design simplifies circuit topology compared to discrete solutions. Verify that the 600 V rating meets system voltage requirements and that the package dimensions fit the mechanical constraints.
This part belongs to the MURF400xxR series of silicon super fast recovery rectifiers. It shares the Three Tower package format with other models in the family, such as the MURT40040. The series offers various voltage ratings from 400 V to 600 V while maintaining a consistent 400 A current capacity.
The 'R' suffix denotes that the device leads are reversed compared to standard configurations.
No, the component is not ESD sensitive.