MURHB840CT

MURHB840CT

$1.69
  • Description:DIODE ARRAY GP 400V 4A D2PAK
  • Series:-

SKU:cd7853d21476 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 400V 4A D2PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):4A
  • Voltage - Forward (Vf) (Max) @ If:2.2 V @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):28 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 400 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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MURHB840CT

Overview

The MURHB840CT is an ultrafast power rectifier manufactured by onsemi, designed for surface mount applications in the D2PAK package. It features a peak repetitive reverse voltage of 400 V and supports an average rectified forward current of 8.0 A at a case temperature of 120°C. The device exhibits an ultrafast recovery time of 28 ns with a maximum instantaneous forward voltage of 2.2 V at 25°C. It operates within a junction temperature range of -65 to +175°C and includes controlled avalanche energy capability of 20 mJ.

Feature Summary

  • Ultrafast 28 nanosecond recovery times for high-frequency switching efficiency
  • High voltage capability with 400 V peak repetitive reverse voltage rating
  • Robust thermal performance supporting up to 175°C operating junction temperature
  • Short heat sink tab manufactured without shearing for improved mechanical integrity

Applications

  • Switching power supplies
  • Inverters
  • Free wheeling diodes

Procurement Notes

Verify the specific ordering suffix (G or T4G) to confirm packaging format, as standard rails differ from tape and reel quantities. Ensure compliance with RoHS directives and Pb-Free requirements if applicable to your manufacturing process. Confirm that the SURHB8 prefix variant is selected only when automotive qualification and unique site control changes are explicitly required.

Selection Notes

Select this component for designs requiring surface mount ultrafast rectification with high surge current handling capabilities. Evaluate thermal resistance parameters against your heatsinking strategy, noting the distinct junction-to-case and junction-to-ambient ratings. Consider the controlled avalanche energy specification if the circuit topology subjects the diode to inductive load switching transients.

Part Context

This device belongs to the MURHB series of ultrafast rectifiers from onsemi, specifically engineered for power surface mount applications. It utilizes the D2PAK package style, offering a footprint similar to industrial standard TO-220 packages while providing surface mount advantages. The product line emphasizes low leakage and high temperature stability for demanding power electronics environments.

Replacement Considerations

SURHB8840CTT4G serves as the automotive qualified equivalent with identical electrical characteristics but requires unique site and control change documentation.

FAQ

What is the maximum non-repetitive peak surge current rating?

The device can withstand a non-repetitive peak surge current of 100 A under half-wave, single-phase, 60 Hz conditions applied at rated load.

How does the forward voltage drop vary with temperature?

The maximum instantaneous forward voltage decreases as temperature increases, specified at 2.2 V at 25°C and 1.9 V at 150°C case temperature for a 4.0 A forward current.

Is the device suitable for controlled avalanche operation?

Yes, the datasheet specifies a controlled avalanche energy rating of 20 mJ, indicating suitability for applications involving inductive switching where avalanche events may occur.

MURHB840CTMURHB840CT
$1.69
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