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Product Detailed Parameters
- Description：DIODE MODULE GP 400V 50A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.35 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT10040 is a silicon super fast recovery diode manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate, rated for a repetitive peak reverse voltage of 400 V and an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.3 V at 50 A and a peak forward surge current capability of 1500 A. Key electrical characteristics include a maximum reverse recovery time of 90 ns and a junction-to-case thermal resistance of 1.0 °C/W per leg. Operating temperatures range from -55 °C to 150 °C.
Feature Summary
- High surge capability utilizing a three-tower package design
- Electrically isolated base plate construction
- Super fast recovery silicon technology
Applications
- General purpose rectification in power electronics
- Free wheeling diode applications
- Industrial power conversion systems
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the required voltage rating and current capacity align with the system's operational requirements before procurement. Confirm compliance with relevant environmental standards if applicable to the final assembly.
Selection Notes
Select this component based on its 400 V blocking voltage and 100 A continuous current rating. Consider the 1.0 °C/W thermal resistance for heat sink sizing. Evaluate the 90 ns reverse recovery time for high-frequency switching applications. Verify the isolated base plate requirement for the specific circuit topology.
Part Context
This component belongs to the MURT10040 through MURT10060R series of silicon super fast recovery diodes. The series offers various voltage ratings while maintaining consistent current handling capabilities. The three-tower package provides a compact solution for high-power density designs requiring electrical isolation.
Replacement Considerations
Direct substitutes within the same series include MURT10060R. Verify pinout compatibility and thermal performance when considering alternative manufacturers or different package types.
FAQ
What is the maximum reverse recovery time for the MURT10040?
The maximum reverse recovery time is 90 ns.
Is the base plate electrically isolated?
Yes, the package features an electrically isolated base plate.
What is the peak forward surge current rating?
The peak forward surge current is 1500 A per leg.
