MURT10060

MURT10060

$65.95
  • Description:DIODE MODULE GP 600V 50A 3TOWER
  • Series:-

SKU:5ac3301e95c5 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 50A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):50A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT10060

Overview

The GeneSiC Semiconductor MURT10060 is a silicon super fast recovery diode module featuring a three tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 600 V and an average forward current rating of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.7 V at 50 A and a maximum reverse recovery time of 110 ns. It supports a peak forward surge current of 1500 A and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • High surge capability designed for demanding power applications
  • Electrically isolated base plate for enhanced safety and thermal management
  • Three tower package configuration for efficient mounting

Applications

  • High frequency switching power supplies
  • Induction heating systems
  • Uninterruptible power supply (UPS) circuits

Procurement Notes

Verify the specific suffix designation, as variants such as MURT10060R exist with reversed leads. Confirm that the required voltage rating aligns with the 600 V specification rather than lower ratings in the series. Ensure compatibility with the three tower mounting style and verify lead orientation before integration into the design.

Selection Notes

Select this component when high surge current handling and fast recovery characteristics are required. The 600 V rating suits medium-voltage applications. Consider the thermal resistance of 1.0 °C/W per leg for heat sink sizing. Verify that the operating environment stays within the specified temperature limits.

Part Context

This part belongs to the MURT100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants ranging from 400 V to 600 V reverse voltage. All models share the same three tower package form factor and general electrical architecture, differing primarily in their voltage blocking capabilities.

Replacement Considerations

Direct substitutes include other MURT10060 units from the same manufacturer. Cross-brand replacements must match the 600 V rating, 100 A current capacity, and three tower package dimensions.

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