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The GeneSiC Semiconductor MURT10060 is a silicon super fast recovery diode module featuring a three tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 600 V and an average forward current rating of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.7 V at 50 A and a maximum reverse recovery time of 110 ns. It supports a peak forward surge current of 1500 A and operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix designation, as variants such as MURT10060R exist with reversed leads. Confirm that the required voltage rating aligns with the 600 V specification rather than lower ratings in the series. Ensure compatibility with the three tower mounting style and verify lead orientation before integration into the design.
Select this component when high surge current handling and fast recovery characteristics are required. The 600 V rating suits medium-voltage applications. Consider the thermal resistance of 1.0 °C/W per leg for heat sink sizing. Verify that the operating environment stays within the specified temperature limits.
This part belongs to the MURT100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants ranging from 400 V to 600 V reverse voltage. All models share the same three tower package form factor and general electrical architecture, differing primarily in their voltage blocking capabilities.
Direct substitutes include other MURT10060 units from the same manufacturer. Cross-brand replacements must match the 600 V rating, 100 A current capacity, and three tower package dimensions.