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Product Detailed Parameters
- Description：DIODE MODULE GP 400V 150A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.35 V @ 150 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：150 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT30040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 400 V, an RMS reverse voltage of 283 V, and a DC blocking voltage of 400 V. It provides an average forward current of 300 A per package and a peak forward surge current of 2750 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.35 V at 150 A and a maximum reverse recovery time of 110 ns. The operating temperature range spans from -55 °C to 150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Three tower package configuration providing isolation type construction
- Electrically isolated base plate for enhanced safety and thermal management
Applications
- Switch mode power supplies
- Industrial motor drives
- DC-DC converters
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the selected component meets the required thermal resistance and voltage ratings for the intended application environment. Confirm availability status directly with authorized distributors or the manufacturer prior to procurement planning.
Selection Notes
Select this component based on its high average forward current capacity and low reverse recovery time suitable for high-frequency switching applications. Consider the thermal resistance specifications when designing heat dissipation solutions. Verify that the package dimensions and mounting requirements align with the target system design constraints.
Part Context
This component belongs to the MURT series of silicon super fast recovery diodes offered by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MURT30060. These modules are engineered for robust performance in high-power electronic systems requiring reliable rectification and fast switching characteristics.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same product family or equivalent specifications from other manufacturers.
