MURT30040R

Overview

The GeneSiC Semiconductor MURT30040R is a silicon super fast recovery diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 400 V and an average forward current rating of 300 A per package. The device supports a peak forward surge current of 2750 A per leg and exhibits a maximum reverse recovery time of 110 ns. Thermal resistance from junction to case is 0.40 °C/W per leg, with an operating temperature range spanning -55 °C to 150 °C.

Feature Summary

• High surge capability designed for demanding power applications
• Three tower package configuration providing robust mechanical structure
• Electrically isolated base plate for enhanced safety and thermal management

Applications

• Industrial power supplies
• Inverter circuits
• DC-DC converters

Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the required voltage and current ratings align precisely with the system design specifications before procurement. Confirm compliance with relevant environmental standards if applicable to the intended deployment environment.

Selection Notes

Select this component when high surge current handling and fast recovery characteristics are required in a compact isolated module. Evaluate the thermal resistance and operating temperature limits to ensure adequate heat dissipation within the target enclosure constraints.

Part Context

This component belongs to the MURT300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings up to 600 V while maintaining consistent current capabilities and package dimensions across the lineup.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Generic replacements may not match the specific electrical parameters or package isolation requirements.