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The MURT40020R is a silicon super fast recovery diode module from the MURT40005 series, manufactured by GeneSiC Semiconductor. It features a three tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 400 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm terminal configuration details. Confirm that the component meets all required environmental standards for the intended application. Ensure proper handling procedures are followed during installation to maintain the integrity of the isolated base plate and electrical connections.
Select this module for applications requiring high current capacity and fast switching speeds. The 200 V rating suits lower voltage DC bus applications. Consider the 400 A average current rating and thermal resistance when designing heat sinks. Verify compatibility with the three tower package dimensions and screw mounting requirements for the target chassis design.
This component belongs to the MURT40005 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 400 A current rating. The MURT40020R represents the highest voltage option in this specific lineup, providing robust performance for demanding power conversion tasks.
MURT40020 without R suffix shares identical electrical specifications but differs in lead orientation.