MURTA200120R

MURTA200120R

$103.00
  • Description:DIODE MOD GP 1200V 100A 3TOWER
  • Series:-

SKU:608389b37787 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD GP 1200V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:2.6 V @ 100 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA200120R

Overview

The MURTA200120R is a silicon super fast recovery diode module from the GeneSiC Semiconductor MURTA series. It features a heavy three tower package with an electrically isolated base plate and reversed leads. The device supports a repetitive peak reverse voltage of 1200 V and an average forward current of 200 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 2.6 V, a peak forward surge current of 2000 A, and a maximum reverse recovery time of 110 ns. The thermal resistance from junction to case is 0.45 °C/W per leg.

Feature Summary

  • High surge capability designed for demanding power applications
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Not ESD sensitive for simplified handling during assembly

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • DC-DC converters

Procurement Notes

Verify the specific part number suffix against official documentation to confirm lead configuration, as the 'R' designation indicates reversed leads compared to standard variants. Confirm that the component meets required isolation standards for the intended application environment. Ensure compatibility with existing thermal management solutions given the specified junction-to-case thermal resistance values.

Selection Notes

Select this component when high voltage blocking capability and fast recovery characteristics are required in a robust mechanical package. The isolated base plate allows for direct mounting to heatsinks without additional insulators. Consider the thermal resistance and current ratings to ensure adequate cooling design for continuous operation at elevated temperatures.

Part Context

This module belongs to the MURTA200 series of silicon super fast recovery diodes. The series offers various voltage ratings ranging from 600 V to 1200 V while maintaining a consistent 200 A average forward current rating. The heavy three tower package provides mechanical stability and efficient heat dissipation for high-power density designs.

Replacement Considerations

MURTA200120

MURTA200120RMURTA200120R
$103.00
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