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The MURTA200120R is a silicon super fast recovery diode module from the GeneSiC Semiconductor MURTA series. It features a heavy three tower package with an electrically isolated base plate and reversed leads. The device supports a repetitive peak reverse voltage of 1200 V and an average forward current of 200 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 2.6 V, a peak forward surge current of 2000 A, and a maximum reverse recovery time of 110 ns. The thermal resistance from junction to case is 0.45 °C/W per leg.
Verify the specific part number suffix against official documentation to confirm lead configuration, as the 'R' designation indicates reversed leads compared to standard variants. Confirm that the component meets required isolation standards for the intended application environment. Ensure compatibility with existing thermal management solutions given the specified junction-to-case thermal resistance values.
Select this component when high voltage blocking capability and fast recovery characteristics are required in a robust mechanical package. The isolated base plate allows for direct mounting to heatsinks without additional insulators. Consider the thermal resistance and current ratings to ensure adequate cooling design for continuous operation at elevated temperatures.
This module belongs to the MURTA200 series of silicon super fast recovery diodes. The series offers various voltage ratings ranging from 600 V to 1200 V while maintaining a consistent 200 A average forward current rating. The heavy three tower package provides mechanical stability and efficient heat dissipation for high-power density designs.
MURTA200120