MURTA20060R

Overview

The GeneSiC Semiconductor MURTA20060R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 200 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 110 ns. The device operates within a junction temperature range of -55 to 150 °C and has a maximum thermal resistance from junction to case of 0.45 °C/W per leg.

Feature Summary

• Heavy three tower package design providing high surge capability
• Electrically isolated base plate for safety and mounting flexibility
• Super fast recovery characteristics suitable for high-frequency applications

Applications

• High frequency switching power supplies
• Induction heating systems
• Uninterruptible power supply (UPS) circuits

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration, as the 'R' variant indicates reversed leads compared to standard versions. Confirm that the component meets required RoHS compliance standards for your region. Ensure the supplier provides traceability data consistent with the manufacturer's quality control protocols before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring robust surge handling and low reverse recovery charge in a thermally efficient package. The 600 V rating suits medium-voltage AC-DC conversion stages. Evaluate the 0.45 °C/W thermal resistance against your heatsinking strategy to maintain junction temperatures within the specified operational limits during continuous conduction periods.

Part Context

This module belongs to the MURTA200 series, which includes variants ranging from 600 V to 1200 V reverse voltage ratings. All members share the same 200 A average forward current capacity and the heavy three tower physical form factor. The series is designed for industrial power electronics where reliability under high thermal stress is critical.

Replacement Considerations

Direct substitutes must match the 600 V VRRM, 200 A IF(AV), and Three Tower package dimensions. Verify reverse recovery time and forward voltage specifications to ensure circuit compatibility. Note that lead orientation may differ between standard and 'R' suffix parts.