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The MURTA30020R is a silicon super fast recovery diode module featuring a heavy three tower package with an electrically isolated base plate. It offers a repetitive peak reverse voltage of 200 V and an average forward current rating of 300 A per package. The device supports a peak forward surge current of 2750 A per leg and maintains a maximum instantaneous forward voltage of 1.0 V at IF=0.5 A. Key electrical characteristics include a maximum reverse recovery time of 130 ns and a junction-to-case thermal resistance of 0.40 °C/W. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet, ensuring compatibility with existing board layouts. Confirm the manufacturer designation aligns with GeneSiC Semiconductor specifications. Check for RoHS compliance status if required by project standards. Validate that the isolated base plate configuration matches thermal management requirements. Ensure storage conditions remain within the specified temperature range to maintain component integrity.
Select this module when high current handling and fast switching speeds are critical. The 200 V rating suits low-voltage high-current applications. Consider the 0.40 °C/W thermal resistance for heatsink sizing. The isolated base plate allows direct mounting to grounded chassis without additional insulators. Verify lead orientation due to the reversed configuration associated with the 'R' suffix.
This component belongs to the MURTA300 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings up to 400 V. All models share the same heavy three tower package structure and similar current capabilities. The MURTA30020R specifically targets the 200 V segment of this product line.
MURTA30020 is a compatible alternative within the same series. Both parts share identical electrical ratings and package dimensions. Verify lead orientation differences if substituting non-R variants into designs expecting reversed leads.