ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MOD GP 1200V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：2.6 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
Download product information
Overview
The MURTA400120R is a silicon super fast recovery diode module featuring a heavy three tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 1200 V and an average forward current of 400 A per package. The device exhibits a maximum instantaneous forward voltage of 2.6 V at 200 A and a peak forward surge current capability of 3300 A per leg. Maximum reverse recovery time is 180 ns, with a junction-to-case thermal resistance of 0.35 °C/W. Operating temperatures range from -55°C to 150°C.
Feature Summary
- High surge capability supported by a heavy three tower package design
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Not ESD sensitive for simplified handling during assembly
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm terminal configuration details. Ensure that the selected component matches the required voltage and current ratings for the intended application circuit. Confirm compliance with relevant environmental standards before finalizing procurement orders.
Selection Notes
Select this component based on its 1200 V blocking voltage and 400 A continuous current capacity. Consider the 0.35 °C/W thermal resistance for heatsink design requirements. Verify the reversed lead configuration associated with the 'R' suffix to ensure correct PCB footprint alignment during integration.
Part Context
This component belongs to the MURTA400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 600 V to 1200 V reverse voltage. All modules share the same heavy three tower isolation package design, differing primarily in their voltage ratings and specific electrical characteristics.
Replacement Considerations
Direct replacements must match the 1200 V rating, 400 A current capacity, and three tower isolated package dimensions. Verify pinout compatibility, particularly regarding the reversed leads indicated by the 'R' suffix, to ensure mechanical and electrical interchangeability without redesigning the host system.
FAQ
What does the 'R' suffix indicate in the part number?
The 'R' suffix indicates that the device has reversed leads compared to the standard configuration.
Is the base plate electrically connected to the terminals?
No, the module features an electrically isolated base plate.
What is the maximum thermal resistance from junction to case?
The maximum thermal resistance from junction to case is 0.35 °C/W per leg.
