MURTA40040R

MURTA40040R

$113.34
  • Description:DIODE MODULE GP 400V 200A 3TOWER
  • Series:-

SKU:24d8b251379c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 400 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA40040R

Overview

The MURTA40040R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 400 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The junction-to-case thermal resistance is 0.35 °C/W. Operating temperatures range from -55 °C to 150 °C.

Feature Summary

  • High surge capability provided by the heavy three tower package design
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Super fast recovery characteristics suitable for high-frequency applications

Applications

  • High power DC-DC converters
  • Induction heating systems
  • Uninterruptible power supplies (UPS)
  • Motor drive circuits

Procurement Notes

Verify the specific part number suffix against official datasheets to confirm terminal configuration, as 'R' variants may have reversed leads. Confirm manufacturer origin, as GeneSiC assets are managed by Navitas Semiconductor. Ensure compliance with RoHS directives if required by your application standards. Request relevant certification documents directly from authorized distributors or the manufacturer.

Selection Notes

Select this component based on its 400 A current rating and 400 V blocking voltage requirements. Evaluate the thermal management needs considering the 0.35 °C/W junction-to-case resistance. Verify that the 150 ns reverse recovery time aligns with the switching frequency of the target circuit. Ensure the mechanical dimensions of the three tower package fit the available PCB space and mounting constraints.

Part Context

The MURTA40040R belongs to the MURTA400 series of silicon super fast recovery diodes. This series includes variants with different voltage ratings, ranging from 200 V to 400 V. All models in this family share the same heavy three tower package structure and similar thermal characteristics, offering a scalable solution for various high-power rectification needs within the same form factor.

Replacement Considerations

Direct substitutes within the same series include the MURTA40020R for lower voltage applications. Cross-brand replacements require matching the 400 A current, 400 V voltage, and three tower package type. Verify pinout compatibility, especially regarding lead orientation differences between standard and 'R' suffix versions.

MURTA40040RMURTA40040R
$113.34
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