MURTA50020R

Overview

The GeneSiC Semiconductor MURTA50020R is a silicon super fast recovery diode module rated for 200 V repetitive peak reverse voltage and 500 A average forward current per package. It features an isolated base plate and heavy three tower construction. The device supports junction temperatures from -55 °C to +150 °C, with a maximum thermal resistance of 0.30 °C/W per leg. Peak forward surge current reaches 3800 A, while maximum reverse recovery time is specified at 200 ns.

Feature Summary

• Heavy three tower package design providing high surge capability
• Electrically isolated base plate for safety and mounting flexibility
• Not ESD sensitive during handling and assembly

Applications

• High power rectification in industrial motor drives
• DC-DC converter output stages
• Inverter circuits requiring fast recovery characteristics

Procurement Notes

Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet. Confirm that the 200 V rating aligns with system requirements rather than higher voltage variants like the 400 V version. Ensure thermal management solutions accommodate the 0.30 °C/W junction-to-case resistance under full load conditions.

Selection Notes

Select this component when high current capacity and fast switching speeds are required in an isolated package. The 200 V rating suits lower voltage DC bus applications compared to the 400 V variant. Consider the physical dimensions of the three tower package for PCB or chassis layout constraints.

Part Context

This part belongs to the MURTA500 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 400 V, all sharing the same 500 A current rating and mechanical package structure.

Replacement Considerations

MURTA50040R serves as a higher voltage alternative within the same series.