MURTA50040

Overview

The GeneSiC Semiconductor MURTA50040 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 400 V and an average forward current of 500 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 3800 A, and a maximum reverse recovery time of 200 ns. The device operates within a junction temperature range of -55 to 150 °C.

Feature Summary

• High surge capability with a heavy three tower package design
• Electrically isolated base plate for enhanced safety
• Not sensitive to electrostatic discharge

Applications

• Industrial power supplies
• Motor drives
• Inverters
• Choppers

Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm that the component meets all required thermal management specifications for the intended application environment. Ensure compatibility with existing mounting hardware due to the specific package dimensions.

Selection Notes

Select this component based on its 400 V reverse voltage rating and 500 A current capacity. Consider the 200 ns reverse recovery time for high-frequency switching applications. Evaluate the thermal resistance requirements relative to the system's cooling capabilities to ensure reliable operation within the specified temperature limits.

Part Context

This module belongs to the MURTA500 series, which includes variants ranging from 200 V to 400 V reverse voltage ratings. All models in this series share the same physical package structure and current handling capabilities, differing primarily in their voltage blocking specifications.

Replacement Considerations

MURTA50020R