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The GeneSiC MURTA60020R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A. It features a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 4400 A, and a maximum reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.28 °C/W per leg. Operating temperatures range from -55 °C to 150 °C.
Verify the specific voltage rating (200 V) against system requirements. Confirm the 'R' suffix indicates reversed leads as documented. Ensure mounting hardware matches the three tower package dimensions. Check for RoHS compliance status in official documentation before procurement.
Select this component for applications requiring 600 A continuous current handling at low voltage levels. The 250 ns reverse recovery time suits high-frequency switching environments. Consider the 0.28 °C/W thermal resistance for heatsink design calculations to maintain junction temperature within limits.
This part belongs to the MURTA600 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings up to 400 V. The MURTA60020R specifically targets lower voltage, high-current applications within this family.
Direct substitutes are not explicitly listed in the provided datasheet. Verify pinout compatibility if considering alternative brands. Ensure thermal resistance and surge current capabilities meet or exceed original specifications.
The 'R' suffix indicates that the device has reversed leads compared to the standard configuration.
No, the datasheet specifies that the device is not ESD sensitive.
The maximum reverse recovery time is 250 ns per leg.