MURTA60020R

MURTA60020R

$133.36
  • Description:DIODE MODULE GP 200V 300A 3TOWER
  • Series:-

SKU:9669a2c30a9a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MODULE GP 200V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):200 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA60020R

Overview

The GeneSiC MURTA60020R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A. It features a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 4400 A, and a maximum reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.28 °C/W per leg. Operating temperatures range from -55 °C to 150 °C.

Feature Summary

  • Heavy three tower package design providing high surge capability
  • Electrically isolated base plate construction
  • Super fast recovery characteristics for efficient switching

Applications

  • High power rectification circuits
  • Industrial motor drives
  • Power supply units requiring fast recovery

Procurement Notes

Verify the specific voltage rating (200 V) against system requirements. Confirm the 'R' suffix indicates reversed leads as documented. Ensure mounting hardware matches the three tower package dimensions. Check for RoHS compliance status in official documentation before procurement.

Selection Notes

Select this component for applications requiring 600 A continuous current handling at low voltage levels. The 250 ns reverse recovery time suits high-frequency switching environments. Consider the 0.28 °C/W thermal resistance for heatsink design calculations to maintain junction temperature within limits.

Part Context

This part belongs to the MURTA600 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings up to 400 V. The MURTA60020R specifically targets lower voltage, high-current applications within this family.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Verify pinout compatibility if considering alternative brands. Ensure thermal resistance and surge current capabilities meet or exceed original specifications.

FAQ

What does the 'R' suffix indicate in the model number?

The 'R' suffix indicates that the device has reversed leads compared to the standard configuration.

Is the MURTA60020R sensitive to electrostatic discharge?

No, the datasheet specifies that the device is not ESD sensitive.

What is the maximum reverse recovery time for this module?

The maximum reverse recovery time is 250 ns per leg.

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