MURTA60040

MURTA60040

$133.36
  • Description:DIODE MODULE GP 400V 300A 3TOWER
  • Series:-

SKU:3ee5fcb08e17 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):220 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURTA60040

Overview

The MURTA60040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 600 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 4400 A per leg, and a maximum reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.28 °C/W.

Feature Summary

  • Heavy three tower package design providing high surge capability
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Not sensitive to electrostatic discharge (ESD)

Applications

  • High power industrial rectification systems
  • DC-DC converters requiring super fast recovery characteristics
  • Inverter circuits in motor drives

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration, as 'R' variants feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest product data sheet before integration into regulated assemblies. Ensure thermal interface materials are compatible with the isolated base plate structure for optimal heat dissipation during operation.

Selection Notes

Select this component when applications demand high average current handling alongside rapid switching speeds. The 400 V rating suits medium-voltage DC bus applications. Evaluate the 0.28 °C/W thermal resistance against system cooling capabilities. Consider the heavy three tower package dimensions for mechanical fit within the target enclosure layout.

Part Context

This part belongs to the MURTA600 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series spans voltage ratings from 200 V to 400 V, sharing common packaging and thermal characteristics. The MURTA60040 represents the higher voltage variant within this specific current-rated family.

Replacement Considerations

Direct substitutes must match the 600 A current rating, 400 V reverse voltage, and three tower isolation package. Verify that alternative components maintain comparable reverse recovery times and thermal resistance values to ensure circuit performance parity.

MURTA60040MURTA60040
$133.36
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