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The MURTA60040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 600 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 4400 A per leg, and a maximum reverse recovery time of 250 ns. The junction-to-case thermal resistance is 0.28 °C/W.
Verify the specific suffix designation against official documentation to confirm terminal configuration, as 'R' variants feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest product data sheet before integration into regulated assemblies. Ensure thermal interface materials are compatible with the isolated base plate structure for optimal heat dissipation during operation.
Select this component when applications demand high average current handling alongside rapid switching speeds. The 400 V rating suits medium-voltage DC bus applications. Evaluate the 0.28 °C/W thermal resistance against system cooling capabilities. Consider the heavy three tower package dimensions for mechanical fit within the target enclosure layout.
This part belongs to the MURTA600 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series spans voltage ratings from 200 V to 400 V, sharing common packaging and thermal characteristics. The MURTA60040 represents the higher voltage variant within this specific current-rated family.
Direct substitutes must match the 600 A current rating, 400 V reverse voltage, and three tower isolation package. Verify that alternative components maintain comparable reverse recovery times and thermal resistance values to ensure circuit performance parity.