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The GeneSiC Semiconductor MURTA60060 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 600 A. It features a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 4400 A, and a maximum reverse recovery time of 280 ns. The junction-to-case thermal resistance is 0.28 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix designation when ordering, as the datasheet indicates that devices with the 'R' suffix have reversed leads compared to standard configurations. Confirm the exact terminal configuration matches the target circuit board layout before finalizing procurement to ensure correct polarity and connection integrity during assembly.
Select this component for applications requiring high current handling and fast switching speeds. Ensure the cooling solution can maintain the junction temperature within the specified -55 °C to +150 °C range given the 0.28 °C/W thermal resistance. Verify that the system's peak surge currents do not exceed the 4400 A limit per leg to prevent device failure.
This module belongs to the MURTA600 series, which includes variants ranging from 600 V to 1200 V reverse voltage ratings. The series utilizes a standardized heavy three tower package format, allowing for consistent mechanical integration across different voltage levels while maintaining similar thermal and electrical performance profiles for high-power rectification tasks.
Direct substitutes within the same series include the MURTA600120 for higher voltage requirements. When replacing, verify lead orientation differences between standard and 'R' suffix versions to avoid installation errors.