MURTA60060R

$133.36

Description：DIODE MODULE GP 600V 300A 3TOWER
Series：-

SKU:d62cc1f66a02 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 600V 300A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：300A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 300 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：280 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MURTA60060R

Overview

The MURTA60060R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 600 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a peak forward surge current of 4400 A per leg, and a maximum reverse recovery time of 280 ns. The junction-to-case thermal resistance is 0.28 °C/W. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

Heavy three tower package design providing high surge capability
Electrically isolated base plate for safety and mounting flexibility
Not ESD sensitive for simplified handling

Applications

High power rectification in industrial converters
Inverter circuits requiring fast recovery characteristics
DC-DC conversion modules

Procurement Notes

Verify the specific part number against official GeneSiC Semiconductor documentation to confirm terminal configuration and electrical ratings. Ensure the component matches the required voltage and current specifications for the target application. Check for any recent product discontinuation notices or alternative sourcing options if availability is constrained.

Selection Notes

Select this module for applications demanding high current capacity and robust surge performance. The isolated base plate facilitates direct heatsink mounting without additional insulators. Consider the thermal resistance and operating temperature range when designing the cooling system to ensure reliable operation under continuous load conditions.

Part Context

This component belongs to the MURTA series of silicon super fast recovery diodes. The series includes variants with different voltage ratings, such as 600 V and 1200 V models. The 'R' suffix typically indicates reversed leads compared to standard configurations within the same family.