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Product Detailed Parameters
- Description：JFET
- Series：*
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MV2N4392UB/TR is a Silicon N-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for high-reliability applications and features a surface-mount SMD-3 package configuration. The device supports a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. It provides a continuous drain current capability of 175 mA with a maximum power dissipation rating of 1.8 W. The component operates within an extended temperature range from -65 °C to +200 °C, ensuring stability in demanding environments.
Feature Summary
- Utilizes silicon technology for robust performance in high-reliability circuits
- Supports extreme operating temperatures up to 200 °C
- Provides single-channel N-Channel JFET configuration
Applications
- High-reliability analog signal processing
- Military and aerospace electronic systems
- Harsh environment sensor interfaces
Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure that the ordering information matches the required surface-mount configuration and environmental ratings before finalizing procurement. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.
Selection Notes
Select this component when a high-temperature capable N-Channel JFET is required for space-constrained designs. The SMD-3 package facilitates automated assembly processes while maintaining electrical characteristics suitable for precision analog applications. Consider the 1.8 W power dissipation limit and thermal management requirements during circuit layout planning.
Part Context
This part belongs to Microchip's high-reliability semiconductor portfolio, which includes specialized transistors and diodes intended for defense, aerospace, and industrial markets. The MV2N series represents a line of ruggedized junction field-effect transistors engineered to withstand severe operational conditions and ensure long-term reliability in critical systems.
Replacement Considerations
Consult official Microchip substitution guides or equivalent manufacturer datasheets for verified cross-references. Do not assume pin compatibility or electrical equivalence with generic commercial-grade JFETs without rigorous validation.
