MX2N4093UB

MX2N4093UB

$74.04
  • Description:JFET N-CH 40V 3UB
  • Series:-

SKU:638e8a58a2b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 40V 3UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:16pF @ 20V
  • Resistance - RDS(On):80 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/431

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MX2N4093UB

Overview

The MX2N4093UB is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain current of 8 mA, a continuous drain current rating of 100 pA, and a drain-source on-resistance of 80 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range spanning from -65 C to +175 C.

Feature Summary

  • Utilizes silicon-based JFET technology for robust semiconductor performance.
  • Features a hermetically sealed TO-18-3 metal can package suitable for high-reliability environments.
  • Supports extended operational temperatures ranging from -65 C to +175 C.

Applications

  • High-frequency analog signal amplification circuits
  • Low-noise preamplifier stages in audio or RF equipment
  • Precision constant current source implementations

Procurement Notes

Verify the specific suffix 'UB' against official Microchip documentation to confirm packaging or binning variations. Ensure compatibility with TO-18-3 footprints during PCB layout. Confirm RoHS status as indicated in technical sheets, noting potential leaded options for legacy systems. Validate thermal management requirements given the 360 mW dissipation limit in enclosed assemblies.

Selection Notes

Select this component when a low-noise N-channel JFET with high breakdown voltage is required. Compare Idss values against circuit biasing needs, as the 8 mA typical current influences gain and impedance. Consider the TO-18-3 package constraints for mechanical integration. Evaluate thermal resistance capabilities if operating near the upper temperature limit of 175 C.

Part Context

This part belongs to the 2N4093 series of JFETs produced by Microchip Technology. The series offers various current grades differentiated by suffixes, allowing designers to select specific transconductance levels. The MX prefix typically denotes military or enhanced reliability variants compared to standard commercial parts, adhering to strict quality standards for defense and aerospace applications.

Replacement Considerations

Direct substitutes include the MV2N4093 and standard 2N4093 devices, provided pinout and electrical parameters match. Verify that alternative sources offer equivalent noise figures and breakdown voltages. Ensure replacement packages fit existing TO-18-3 sockets or pads without modification.

MX2N4093UBMX2N4093UB
$74.04
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