ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MX2N4393UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device operates within an ambient temperature range of -65°C to +175°C and features a maximum power dissipation of 360 mW. Key electrical characteristics include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of -40 V, and a zero-gate-voltage drain current of 8 mA.
Feature Summary
- Utilizes silicon technology for stable performance across extreme temperature environments
- Provides high input impedance suitable for low-noise signal amplification applications
- Features a hermetically sealed metal can construction for enhanced durability
Applications
- Low-noise preamplifier stages in audio and instrumentation circuits
- High-impedance buffer circuits requiring minimal loading effects
- Precision analog switching and chopper stabilization systems
Procurement Notes
Verify the specific suffix 'UB' against official Microchip documentation to confirm exact binning or testing criteria. Ensure the procurement channel provides valid manufacturer traceability. Confirm that the TO-18-3 package dimensions match the target PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when designing circuits requiring robust operation at elevated temperatures up to 175°C. Consider the 40 V breakdown rating for appropriate biasing margins. Evaluate the 8 mA IDSS value to ensure compatibility with the desired gain and impedance levels in the target amplifier topology.
Part Context
This JFET belongs to the Microchip 2N439x series of matched and unmatched discrete transistors. These devices are engineered for military and aerospace reliability standards. The series offers consistent electrical parameters to support precision analog design requirements where standard commercial components may lack sufficient thermal stability.
Replacement Considerations
Consult official cross-reference data for compatible substitutes such as the MX2N4391UB or MX2N4392UB. Verify that alternative part numbers maintain identical pinout configurations and meet the required electrical specifications for the specific application environment.
