MX2N4859UB

MX2N4859UB

$57.15
  • Description:JFET N-CH
  • Series:-

SKU:03a3ad8d9bae Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MX2N4859UB

Overview

The MX2N4859UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical characteristics include a zero-gate-voltage drain current of 80 mA, an on-resistance of 60 Ohms, and a power dissipation rating of 1.8 W. It operates within a temperature range of -65°C to +200°C.

Feature Summary

  • High-temperature operation capability up to 200°C utilizing silicon technology
  • Robust 30 V drain-source and gate-source breakdown voltage ratings
  • Metal can construction providing environmental protection

Applications

  • High-reliability analog signal processing circuits
  • Low-noise amplifier stages in aerospace systems
  • Precision instrumentation requiring stable JFET characteristics

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm package type and testing levels. Ensure compatibility with high-temperature soldering processes required for TO-18 packages. Confirm that the requested quantity meets minimum order requirements specified by authorized distributors. Validate compliance with relevant military or industrial standards if applicable to the design.

Selection Notes

Select this component when a high-temperature N-channel JFET with moderate current handling is required. The 80 mA drain current and 60 Ohm resistance suit specific biasing needs. Consider the TO-18 package constraints for board layout. Compare against similar MX2N series devices if different voltage or current specifications are necessary for the application.

Part Context

This part belongs to the MX2N series of high-reliability JFETs produced by Microchip Technology. These components are typically utilized in demanding environments where standard commercial-grade transistors may fail. The series offers various configurations tailored for specialized analog applications requiring robust performance under extreme conditions.

Replacement Considerations

Consult official substitution guides for equivalent parts such as the MX2N4858UB or MX2N4861UB. Verify pinout compatibility and electrical parameter alignment before implementation.

MX2N4859UBMX2N4859UB
$57.15
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