SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MX2N4859UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical characteristics include a zero-gate-voltage drain current of 80 mA, an on-resistance of 60 Ohms, and a power dissipation rating of 1.8 W. It operates within a temperature range of -65°C to +200°C.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and testing levels. Ensure compatibility with high-temperature soldering processes required for TO-18 packages. Confirm that the requested quantity meets minimum order requirements specified by authorized distributors. Validate compliance with relevant military or industrial standards if applicable to the design.
Select this component when a high-temperature N-channel JFET with moderate current handling is required. The 80 mA drain current and 60 Ohm resistance suit specific biasing needs. Consider the TO-18 package constraints for board layout. Compare against similar MX2N series devices if different voltage or current specifications are necessary for the application.
This part belongs to the MX2N series of high-reliability JFETs produced by Microchip Technology. These components are typically utilized in demanding environments where standard commercial-grade transistors may fail. The series offers various configurations tailored for specialized analog applications requiring robust performance under extreme conditions.
Consult official substitution guides for equivalent parts such as the MX2N4858UB or MX2N4861UB. Verify pinout compatibility and electrical parameter alignment before implementation.