SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MXD1210ESA+T is a nonvolatile RAM controller designed to convert standard volatile CMOS RAM into nonvolatile memory. It operates within a supply voltage range of 4.5V to 5.5V and features a quiescent current of 230µA in normal mode, dropping to 2nA in battery backup mode. The device provides write protection during power failures and supports optional redundant batteries. It is housed in an 8-pin SO package and functions across a temperature range of -40°C to +85°C.
Verify the specific suffix against official documentation to confirm lead-free status and packaging type. Confirm that the 'T' designation aligns with reel or cut tape requirements for surface mount assembly processes. Ensure compatibility with existing board layouts before procurement.
Select this component when integrating standard volatile CMOS RAM requires nonvolatile retention capabilities without complex external circuitry. Evaluate the need for battery redundancy features and ensure the operating environment falls within the specified temperature range for reliable performance.
This part belongs to the MXD1210 series of nonvolatile RAM controllers manufactured by Analog Devices / Maxim Integrated. It serves as a bridge between volatile memory and system power supplies, ensuring data integrity during power transitions through automatic switching and protection mechanisms.
MXD1210ESA
It detects power-fail conditions and holds the chip-enable output low to prevent writes, while simultaneously switching power to the RAM from a connected battery source.
Freshness-seal mode isolates batteries from the system upon initial connection, preventing discharge until the main power supply exceeds the trip point, thus preserving shelf life.