NC1D120C20KTNG

$4.38

Description：DIODE SIL CARB 1200V 20A TO2472L
Series：NC1D
Mfr：NovuSem
Package：Tube

SKU:f6d467fedb75 Category: Single Diodes Brand: NovuSem

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Product introduction

NC1D120C20KTNG is listed in the Single Diodes range at ChipApex. The manufacturer field lists NovuSem. Its product description is DIODE SIL CARB 1200V 20A TO2472L. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for NC1D120C20KTNG

Description：DIODE SIL CARB 1200V 20A TO2472L
Series：NC1D
Mfr：NovuSem
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：20A
Voltage - Forward (Vf) (Max) @ If：1.6 V @ 20 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 1200 V
Capacitance @ Vr, F：1371pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2L
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for NC1D120C20KTNG

NC1D120C20KTNG

Single Diodes Overview

The NC1D120C20KTNG is a Silicon Carbide (SiC) Enhanced Junction Barrier Schottky diode in a TO-247-2L package. It features a repetitive peak reverse voltage of 1200V and a continuous forward current of 20A at Tc=152°C. The device supports an operating junction temperature range up to 175°C. Electrical characteristics include a maximum forward voltage of 1.6V at IF=10A and Tj=25°C, and a maximum reverse current of 50µA at VR=1200V and Tj=25°C. Thermal resistance from junction to case is typically 0.62°C/W.

Single Diodes Feature Summary

Enhanced Junction Barrier Schottky structure combining PiN and SBD for low leakage and low forward voltage
Temperature-independent switching behavior with positive temperature coefficient for forward voltage
High surge current capability comparable to MPS structures
No reverse recovery current or forward recovery voltage

Single Diodes Applications

PV Inverters
Charging Piles
Energy Storage Systems
Industrial Power Supply
Automotive Electronics

Single Diodes Procurement Notes

Verify the component against the official NextGen Components specification sheet R0720-NC1D120C20KTNG Rev A2 dated July 20, 2024. Confirm RoHS III compliance and high-frequency free status. Ensure the package matches the TO-247-2L dimensions provided in the datasheet. Check for original manufacturer markings corresponding to NovuSem specifications.

Single Diodes Selection Notes

Select this SiC EJBS diode for applications requiring high efficiency and reduced thermal management complexity. The positive temperature coefficient aids in parallel operation. Consider the 175°C junction temperature rating for high-temperature environments. Evaluate the 1200V blocking voltage against system peak reverse voltages to ensure adequate safety margins.

Single Diodes Part Context

This component belongs to the NC1D series of industrial grade Silicon Carbide Schottky diodes manufactured by NovuSem. The series utilizes a composite PiN and SBD structure to optimize performance. The specific model NC1D120C20KTNG denotes the 1200V rating, 20A current capacity, and TO-247-2L tube packaging configuration within the product line.