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NC1M120C12WDCU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOS Wafer 12mOhm 1200V NiPdA. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NC1M120C12WDCU
- Description：SiC MOS Wafer 12mOhm 1200V NiPdA
- Series：NC1M
- Mfr：NovuSem
- Package：Tray
- FET Type：-
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：214A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：3.5V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：8330 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Wafer
- Package / Case：Die
Single FETs, MOSFETs datasheet and documents for NC1M120C12WDCU
Single FETs, MOSFETs Overview
The NC1M120C12WDCU is a Silicon Carbide (SiC) MOSFET wafer from the NC1M series, manufactured by NovuSem. It features a 1200V Drain-Source Voltage and a typical Drain-Source On-State Resistance of 12mΩ at VGS=20V and ID=100A. The device supports a continuous drain current of 214A at Tc=25°C and operates within a junction temperature range of -55°C to +175°C. The die size measures 7.33mm × 6.64mm with a thickness of 175 ± 15 μm. Topside metallization consists of NiPdAu (4μm), while backside metallization includes Ti-Ni-Ag layers.
Single FETs, MOSFETs Feature Summary
- Low switching loss and high-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery charge
- High blocking voltage combined with low on-resistance
- Topside metallization using NiPdAu for enhanced reliability
Single FETs, MOSFETs Applications
- PV Inverters
- Charging Piles
- Energy Storage Systems
- Industrial Power Supply
- Industrial Motors
Single FETs, MOSFETs Procurement Notes
Verify the specific NextGen Components part code NC1M120C12WDCU against the original manufacturer specification sheet S0128-NC1M120C12WDCU. Confirm compliance with RoHS III and REACH directives prior to integration. Ensure that the sawn wafer format on blue tape matches the required assembly process capabilities. Request the latest electrical characteristics data directly from the supplier to confirm final parametric confirmation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high power density and reduced system component size due to high-frequency operation. Consider the 175°C operating junction temperature for thermal management design. Evaluate the 12mΩ on-state resistance for static loss calculations in industrial power supply and motor drive environments. Verify compatibility with the specified 6-inch wafer handling equipment.
Single FETs, MOSFETs Part Context
This component belongs to the NC1M series of Silicon Carbide MOSFETs produced by NovuSem. It represents an industrial-grade generation designed to lower both static and dynamic losses compared to previous iterations. The product is distributed as a raw wafer rather than a packaged discrete device, intended for advanced packaging or direct integration into custom modules.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 1200V SiC MOSFET wafers offering similar 12mΩ RDS(on) ratings. Verify die dimensions and metallization stack-up compatibility before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
