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NC7S86P5X is listed in the Inverter Gates range at ChipApex. The manufacturer field lists onsemi. Its product description is IC GATE XOR 1CH 2-INP SC70-5. Review the specifications below when checking this part for your BOM.
The NC7S86P5X is a single-channel, two-input exclusive-OR (XOR) gate manufactured by onsemi. It belongs to the TinyLogic NC7S series and utilizes silicon gate CMOS technology. The device is housed in a SC-70-5 surface-mount package. It operates within a supply voltage range of 2 V to 6 V and supports an operating temperature range from -40°C to +85°C. Key electrical characteristics include a maximum input leakage current of 1 µA at 6 V and a typical propagation delay of 27 ns at 3.3 V with a 30 pF load.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your region. Cross-reference the part number with the latest onsemi documentation to validate availability status and any potential lifecycle changes before finalizing procurement plans.
Select this component when a single XOR function is required in space-constrained designs. The NC7S86P5X is appropriate for applications needing operation across a wide voltage range up to 6 V. Consider its propagation delay and drive capability relative to system timing requirements. Ensure the SC-70-5 package dimensions fit the available PCB real estate constraints.
This part is a member of the TinyLogic family, designed for high-density digital logic applications. The NC7S series offers performance comparable to standard logic families but in significantly smaller packages. It serves as a building block for complex digital systems requiring efficient logical operations within minimal physical boundaries.
Check for direct pin-compatible alternatives within the same TinyLogic family or other manufacturers' XOR gates in SC-70-5 packages. Verify functional equivalence regarding voltage ranges and propagation delays before substitution.
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