NCD5701BDR2G

$3.77

Description：IC GATE DRVR HI/LOW SIDE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6582fbe7c15c Category: Gate Drivers Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HI/LOW SIDE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：High-Side or Low-Side
Channel Type：Single
Number of Drivers：1
Gate Type：IGBT
Voltage - Supply：20V
Logic Voltage - VIL, VIH：0.75V, 4.3V
Current - Peak Output (Source, Sink)：7.8A, 6.8A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：9.2ns, 7.9ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

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NCD5701BDR2G

Overview

The NCD5701BDR2G is a high-current IGBT gate driver manufactured by onsemi, designed for robust switching applications. It operates within a supply voltage range of 20 V to 30 V and delivers an output current of 4 A. The device features fast switching characteristics with a rise time of 9.2 ns and a fall time of 7.9 ns. Maximum propagation delays are limited to 75 ns for both turn-on and turn-off states. It functions reliably across an extended temperature range from -40 °C to +125 °C. The component is housed in a compact SOIC-8 surface-mount package.

Feature Summary

High peak output current capability for driving IGBTs
Fast switching speeds with low propagation delay
Wide operating supply voltage range
Extended industrial temperature rating

Applications

Industrial motor drives
Inverter circuits
Switched-mode power supplies

Procurement Notes

Verify the complete part number including the suffix DR2G to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference datasheet revisions to validate electrical parameters against specific design requirements. Ensure sourcing channels provide authentic components to mitigate counterfeit risks.

Selection Notes

Select this component when high peak drive current is required for IGBT modules. The wide supply voltage range accommodates various bootstrap or isolated supply topologies. Consider the SOIC-8 package for space-constrained PCB layouts. Evaluate thermal performance based on the specified power dissipation limits under expected load conditions.

Part Context

This device belongs to the NCD5701 series of high-current gate drivers from onsemi. The series is engineered for demanding power electronics applications requiring reliable switching control. The NCD5701B variant offers specific electrical characteristics optimized for modern IGBT technologies. It serves as a critical interface between low-power control logic and high-power semiconductor switches.