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NCD5701CDR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HI/LOW SIDE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side or Low-Side
- Channel Type：Synchronous
- Number of Drivers：1
- Gate Type：IGBT
- Voltage - Supply：20V
- Logic Voltage - VIL, VIH：0.75V, 4.3V
- Current - Peak Output (Source, Sink)：7.8A, 6.8A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：9.2ns, 7.9ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The NCD5701CDR2G is a high-current IGBT gate driver IC manufactured by onsemi, designed for energy infrastructure applications. It features a single-channel synchronous configuration with both high-side and low-side outputs in an 8-SOIC package. The device supports a maximum supply voltage of 20V and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include peak output currents of 7.8A sink and 6.8A source, typical rise and fall times of 9.2ns and 7.9ns respectively, and logic input thresholds of 0.75V (VIL) and 4.3V (VIH).
Feature Summary
- Provides non-inverting synchronous drive for IGBTs with integrated high-side and low-side outputs.
- Features active Miller clamp functionality to prevent false turn-on during switching events.
- Includes precise under-voltage lockout (UVLO) and DESAT protection with soft shutdown capabilities.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- Solar and wind energy converter systems
Procurement Notes
Verify the specific suffix 'C' in the part number against the official datasheet to confirm the exact operating temperature grade and specification revision. Ensure that the selected packaging option matches the required production volume and handling equipment. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.
Selection Notes
Select this component when high peak current capability is required for fast IGBT switching in compact surface-mount designs. The 8-SOIC package offers board space efficiency compared to larger isolation-based alternatives. Consider the non-isolated topology suitability for control circuits sharing a common ground reference with the power stage.
Part Context
This device belongs to the NCD570x series of high-current IGBT gate drivers from onsemi. The series is specifically engineered for robust performance in demanding energy infrastructure environments. The NCD5701 variant provides a cost-effective solution for applications requiring synchronized dual-output driving without galvanic isolation.
Replacement Considerations
Direct substitutes within the same family include NCD5701ADWR2G and NCD5701BDWR2G, which share identical pinouts and functional characteristics but may differ in temperature ratings or packaging configurations. Verify compatibility with existing PCB footprints and thermal management requirements when considering these alternatives.
