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NCD5702DR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 16SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side or Low-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT
- Voltage - Supply：20V
- Logic Voltage - VIL, VIH：0.75V, 4.3V
- Current - Peak Output (Source, Sink)：7.8A, 6.8A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：9.2ns, 7.9ns
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：16-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The NCD5702DR2G is a high-current IGBT and MOSFET gate driver manufactured by onsemi. It features a half-bridge configuration with one driver and one output channel. The device operates within a supply voltage range of 20 V to 30 V. It delivers an output current capability of 4 A. Typical switching performance includes a rise time of 9.2 ns and a fall time of 7.9 ns. The component is housed in a 16-pin SOIC package designed for surface mount installation. It supports an operating temperature range from -40°C to +125°C.
Feature Summary
- High-current output capability suitable for driving power semiconductors
- Half-bridge topology for synchronous control applications
- Fast switching speeds with nanosecond-level rise and fall times
- Automotive-grade qualification ensuring reliability under harsh conditions
Applications
- IGBT gate driving in industrial motor drives
- MOSFET gate driving in power conversion systems
- Automotive power electronics modules
- Synchronous rectification circuits
Procurement Notes
Verify the specific suffix DR2G corresponds to the required tape and reel packaging format. Confirm that the 16-SOIC footprint matches the target PCB layout dimensions. Ensure the 20V to 30V supply voltage aligns with the system design requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when a single-channel half-bridge driver with 4A output current is required. It is appropriate for applications needing fast switching transitions around 9ns. Consider the 16-pin SOIC package constraints for board space. Verify compatibility with the intended IGBT or MOSFET gate charge requirements within the specified supply voltage limits.
Part Context
This part belongs to the NCD5702 series of gate drivers from onsemi. It is designed for high-performance power switching applications. The series offers robust protection features and reliable operation across wide temperature ranges. It serves as a critical interface between low-voltage control logic and high-power semiconductor switches.
Replacement Considerations
NCD5700DR2G: Offers higher peak current but requires different supply voltage considerations.
FAQ
What is the maximum supply voltage for the NCD5702DR2G?
The maximum supply voltage is 30 V.
Does the NCD5702DR2G support automotive applications?
Yes, it is qualified according to AEC-Q100 standards.
