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NCD5703ADR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side or Low-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT
- Voltage - Supply：20V
- Logic Voltage - VIL, VIH：0.75V, 4.3V
- Current - Peak Output (Source, Sink)：7A, 7.2A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：9.2ns, 7.9ns
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The NCD5703ADR2G is a high-current standalone IGBT and MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 20 V to 30 V and delivers an output current of 4 A. The device features a rise time of 9.2 ns and a fall time of 7.9 ns, with maximum turn-on and turn-off delays of 75 ns. It functions in a half-bridge configuration using a single driver channel. Power dissipation is rated at 700 mW, and the quiescent supply current is 900 uA. The component is housed in an SOIC-8 package and supports operation from -40 C to +125 C.
Feature Summary
- Provides high-current drive capability for switching power devices
- Supports half-bridge topology configurations
- Features fast switching times for efficient signal control
Applications
- IGBT gate driving in industrial motor drives
- MOSFET gate driving in power conversion circuits
- High-current standalone switching applications
Procurement Notes
Verify the specific suffix 'ADR' against the manufacturer's official datasheet to confirm pinout and electrical characteristics match the design requirements. Ensure the operating temperature range aligns with the application environment. Confirm RoHS compliance status through the supplier documentation before finalizing procurement orders.
Selection Notes
Select this component when a single-channel half-bridge driver with high peak current is required. The SOIC-8 package suits surface-mount designs with space constraints. Verify that the 20 V to 30 V supply range fits the system architecture. Consider thermal management due to the 700 mW power dissipation rating in dense layouts.
Part Context
This part belongs to the NCD5703 series of gate drivers from onsemi. It is designed for robust performance in demanding power electronics environments. The series focuses on providing reliable isolation and drive strength for various semiconductor switches. It complements other components in the power management IC category.
Replacement Considerations
Check for NCD5703BDR2G as a potential variant within the same family. Verify if the NCV5703BDR2G automotive-grade version meets the environmental specifications. Ensure any substitute maintains the same SOIC-8 footprint and electrical parameters.
