NCD5703BDR2G

$2.96

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2edb3573fba4 Category: Gate Drivers Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：High-Side or Low-Side
Channel Type：Single
Number of Drivers：1
Gate Type：IGBT
Voltage - Supply：20V
Logic Voltage - VIL, VIH：0.75V, 4.3V
Current - Peak Output (Source, Sink)：7.8A, 6.8A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：9.2ns, 7.9ns
Operating Temperature：-40°C ~ 125°C (TA)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

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NCD5703BDR2G

Overview

The NCD5703BDR2G is a high-current standalone IGBT gate driver manufactured by onsemi. It operates within a supply voltage range of 20 V to 30 V and delivers an output current of 4 A. The device features a rise time of 9.2 ns and a fall time of 7.9 ns, with maximum turn-on and turn-off delays of 75 ns. It functions in a half-bridge configuration with one driver and one output channel. The component supports surface-mount installation in an SOIC-8 package and maintains reliable operation across a temperature range of -40 °C to +125 °C.

Feature Summary

Provides high-current drive capability for IGBT switching applications
Operates as a standalone half-bridge gate driver
Ensures fast signal transition through nanosecond-level rise and fall times

Applications

IGBT gate driving in power conversion systems
High-current standalone switching control
Industrial motor drive circuits

Procurement Notes

Verify the specific suffix against official documentation to confirm exact electrical characteristics and packaging options. Ensure compatibility with system voltage requirements and thermal management needs before procurement. Cross-reference datasheet specifications for operating temperature ranges and package dimensions to validate integration suitability.

Selection Notes

Select this component when a dedicated high-current driver for IGBTs is required in a compact form factor. Consider the 4 A output capability and half-bridge topology for appropriate load matching. Evaluate the SOIC-8 package constraints and operating temperature limits relative to the target application environment.

Part Context

This part belongs to the NCD5703 series of gate drivers from onsemi. The series focuses on providing robust switching performance for power electronics. The NCD5703BDR2G variant specifically targets applications requiring high peak currents and fast switching speeds within a standard surface-mount footprint.