NCD5705BDR2G

NCD5705BDR2G

  • Description:IC GATE DRVR HI/LOW SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0015b7c8b236 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR HI/LOW SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side or Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT
  • Voltage - Supply:20V
  • Logic Voltage - VIL, VIH:0.75V, 4.3V
  • Current - Peak Output (Source, Sink):7.8A, 6.8A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):9.2ns, 7.9ns
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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NCD5705BDR2G

Overview

The NCD5705BDR2G is a high-current IGBT gate driver from onsemi, designed for automotive and industrial power electronics. It operates with a single supply voltage ranging from 10 V to 30 V and delivers peak output currents of +4 A and -6 A. The device features low UVLO thresholds for bias flexibility and includes integrated desaturation protection (DESAT) with programmable delay. It utilizes an SOIC-8 surface-mount package and supports propagation delays of approximately 9.2 ns rise and 7.9 ns fall times. The component is AEC-Q100 qualified and offers a negative output capability to enhance IGBT driving performance.

Feature Summary

  • Provides high current drive capability (+4/-6 A) suitable for IGBT Miller platform voltages
  • Integrates programmable desaturation protection for fault monitoring
  • Features low under-voltage lockout thresholds for flexible biasing
  • Supports direct interface with digital isolators or optocouplers

Applications

  • Traction inverters in electric vehicles
  • PTC heaters for thermal management
  • High-voltage DC-DC converters
  • Auxiliary power subsystems

Procurement Notes

Verify the specific suffix DR2G corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the NCD prefix aligns with standard commercial grade specifications if automotive-grade NCV variants are not strictly mandated by the design requirements. Ensure the SOIC-8 footprint matches the PCB layout constraints.

Selection Notes

Select this component when a standalone high-current driver is needed without external buffering. It is appropriate for designs requiring precise timing matching between turn-on and turn-off transitions. Consider the wide operating temperature range and robust protection features for harsh environments. Evaluate the need for desaturation detection capabilities within the system architecture.

Part Context

This part belongs to the NCD5705B series of high-current IGBT gate drivers. It is engineered to replace discrete buffer solutions, offering a compact and cost-effective alternative. The series is characterized by its ability to handle high peak currents while maintaining signal integrity through short propagation delays. It serves as a critical interface between control logic and power switches.

Replacement Considerations

Direct substitutes include the NCV5705BDR2G for automotive-specific applications. Other compatible options within the same family may vary in pinout or protection features; verify datasheet compatibility before substitution.

NCD5705BDR2GNCD5705BDR2G

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