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Product Detailed Parameters
- Description:IC GATE DRVR HALF BRD/LOW PQFN39
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge, Low-Side
- Channel Type:Single
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:0.65V, 2.7V
- Current - Peak Output (Source, Sink):100mA, 100mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):17ns, 26ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:39-PowerVFQFN
- Supplier Device Package:39-PQFN (5x6)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):30 V
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Overview
The NCP303150MNTWG is an integrated gate driver and MOSFET device from onsemi, designed for high-current DC-DC buck power conversion applications. It combines a high-side MOSFET, a low-side MOSFET, and a dedicated driver within a single PQFN-39 package measuring 5 mm by 6 mm. The component supports input voltages between 4.5 V and 5.5 V, with output currents rated at 50 A and 80 A. It operates across a temperature range of -40 °C to +125 °C and features propagation delays up to 75 ns.
Feature Summary
- Integrates high-side and low-side MOSFETs with a dedicated driver in a compact copper clip package to minimize parasitic effects.
- Includes internal bootstrap diode and precise current monitoring capabilities for enhanced system control.
- Provides comprehensive protection mechanisms including over-temperature protection (OTP), over-current protection (OCP), and undervoltage lockout (UVLO).
Applications
- High-current DC-DC buck power conversion
- Intel Power State 4 compatible systems
Procurement Notes
Verify the status of this component before integration into new designs. The product lifecycle status is listed as NRND (Not Recommended for New Designs). Confirm availability through official onsemi channels or authorized distributors. Ensure that the PQFN-39 package dimensions and pinout match your PCB layout requirements. Check for any recent engineering change notices or obsolescence announcements prior to finalizing procurement plans.
Selection Notes
Select this component when space constraints and high current density are critical factors in power supply design. The integrated nature of the driver and MOSFETs reduces board space compared to discrete solutions. Consider the specific current ratings and thermal performance requirements of your application. Verify compatibility with 3.3 V or 5 V PWM inputs and ensure the operating temperature range meets your environmental specifications.
Part Context
The NCP303150MNTWG belongs to the NCP303 series of integrated drivers and MOSFETs from onsemi. This series focuses on combining power switching elements with control logic to simplify design and improve efficiency in power management applications. The device utilizes silicon technology and is housed in a lead-free, RoHS-compliant PQFN package suitable for surface mount assembly.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for potential alternatives if this NRND component is no longer suitable for production.
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