NCP303151MNTWG

NCP303151MNTWG

$3.55
  • Description:IC GATE DRVR HI/LOW SIDE PQFN39
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:a63b7ea5a038 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HI/LOW SIDE PQFN39
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side or Low-Side
  • Channel Type:Single
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH:0.65V, 2.7V
  • Current - Peak Output (Source, Sink):100mA, 100mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):17ns, 26ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:39-PowerVFQFN
  • Supplier Device Package:39-PQFN (5x6)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):30 V

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NCP303151MNTWG

Overview

The NCP303151MNTWG is an integrated driver and MOSFET with an integrated current monitor, manufactured by onsemi. It combines a high-side MOSFET, a low-side MOSFET, and a gate driver into a single PQFN-39 package. The device features a 30 V / 30 V breakdown voltage for the MOSFETs and supports switching frequencies up to 1 MHz. It delivers peak output currents of 50 A and 80 A. The supply voltage range is 4.5 V to 5.5 V, with a typical operating quiescent current of 8 mA. Propagation delay is maximized at 75 ns. The component operates within a temperature range of -40°C to +125°C.

Feature Summary

  • Integrates high-side and low-side MOSFETs with a dedicated gate driver in a single compact package to reduce parasitic effects and board space.
  • Includes an internal bootstrap diode and precise current monitoring capabilities with over-zero detection options.
  • Supports 3.3 V or 5 V PWM inputs with correct response to three-level PWM signals.
  • Features under-voltage lockout and shutdown functionality for enhanced system protection.

Applications

  • High-current DC-DC buck power conversion applications
  • Power management modules requiring integrated gate driving and switching
  • Systems compatible with Intel PowerState 4

Procurement Notes

Verify the specific ordering suffix MNTWG to ensure the correct PQFN-39 package configuration. Confirm that the design accommodates the NRND (Not Recommended for New Designs) status if applicable to long-term production plans. Ensure input logic levels match the specified 3.3 V or 5 V compatibility. Validate thermal requirements against the maximum junction temperature limits during operation.

Selection Notes

Select this component when minimizing PCB area and parasitic inductance is critical for high-frequency switching performance. It is suitable for designs requiring integrated current sensing without external shunt resistors. Consider the 30 V rating for appropriate voltage headroom in low-voltage DC-DC topologies. Evaluate the trade-off between integration benefits and the NRND status for future-proofing.

Part Context

This part belongs to the NCP303 series of integrated drivers and MOSFETs from onsemi. It is categorized under PMIC - Power Management ICs and specifically MOSFET Gate Drivers. The technology utilizes Silicon (Si) construction. It serves as a consolidated solution replacing discrete driver and MOSFET combinations in power electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NCP303151MNTWGNCP303151MNTWG
$3.55
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