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Product Detailed Parameters
- Description:IC GATE DRVR HI/LOW SIDE PQFN39
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side or Low-Side
- Channel Type:Single
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:0.65V, 2.7V
- Current - Peak Output (Source, Sink):100mA, 100mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):17ns, 26ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:39-PowerVFQFN
- Supplier Device Package:39-PQFN (5x6)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):30 V
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Overview
The NCP303151MNTWG is an integrated driver and MOSFET with an integrated current monitor, manufactured by onsemi. It combines a high-side MOSFET, a low-side MOSFET, and a gate driver into a single PQFN-39 package. The device features a 30 V / 30 V breakdown voltage for the MOSFETs and supports switching frequencies up to 1 MHz. It delivers peak output currents of 50 A and 80 A. The supply voltage range is 4.5 V to 5.5 V, with a typical operating quiescent current of 8 mA. Propagation delay is maximized at 75 ns. The component operates within a temperature range of -40°C to +125°C.
Feature Summary
- Integrates high-side and low-side MOSFETs with a dedicated gate driver in a single compact package to reduce parasitic effects and board space.
- Includes an internal bootstrap diode and precise current monitoring capabilities with over-zero detection options.
- Supports 3.3 V or 5 V PWM inputs with correct response to three-level PWM signals.
- Features under-voltage lockout and shutdown functionality for enhanced system protection.
Applications
- High-current DC-DC buck power conversion applications
- Power management modules requiring integrated gate driving and switching
- Systems compatible with Intel PowerState 4
Procurement Notes
Verify the specific ordering suffix MNTWG to ensure the correct PQFN-39 package configuration. Confirm that the design accommodates the NRND (Not Recommended for New Designs) status if applicable to long-term production plans. Ensure input logic levels match the specified 3.3 V or 5 V compatibility. Validate thermal requirements against the maximum junction temperature limits during operation.
Selection Notes
Select this component when minimizing PCB area and parasitic inductance is critical for high-frequency switching performance. It is suitable for designs requiring integrated current sensing without external shunt resistors. Consider the 30 V rating for appropriate voltage headroom in low-voltage DC-DC topologies. Evaluate the trade-off between integration benefits and the NRND status for future-proofing.
Part Context
This part belongs to the NCP303 series of integrated drivers and MOSFETs from onsemi. It is categorized under PMIC - Power Management ICs and specifically MOSFET Gate Drivers. The technology utilizes Silicon (Si) construction. It serves as a consolidated solution replacing discrete driver and MOSFET combinations in power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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