NCP4422P

$1.26

Description：BUFFER/INVERTER MOSFET DRIVER
Series：*
Mfr：onsemi
Package：Bulk

SKU:60e2e29440b1 Category: Gate Drivers Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：BUFFER/INVERTER MOSFET DRIVER
Series：*
Mfr：onsemi
Package：Bulk
Driven Configuration：-
Channel Type：-
Number of Drivers：-
Gate Type：-
Voltage - Supply：-
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：-
Input Type：-
Rise / Fall Time (Typ)：-
Operating Temperature：-
Mounting Type：-
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Supplier Device Package：-
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High Side Voltage - Max (Bootstrap)：-

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NCP4422P

Overview

The NCP4422P is a power bipolar transistor array manufactured by onsemi. It features four NPN silicon elements housed in a SIP-10 plastic/epoxy package. The device supports a maximum collector current of 4A and a collector-emitter breakdown voltage of 25V. It operates within a temperature range of -55°C to +150°C, with a junction temperature rating up to 300°C. The component utilizes through-hole mounting technology for reliable integration into high-power amplification circuits.

Feature Summary

Integrates four independent NPN silicon elements within a single SIP-10 package
Features built-in zener diode protection between collector and base terminals
Designed for high-speed switching applications with large energy handling capability
Ensures small variation in withstand pressure for consistent performance

Applications

Power amplification circuits
High-speed switching systems
Industrial control modules requiring multiple transistor arrays

Procurement Notes

Verify the exact part number suffix against official manufacturer documentation to confirm pin configuration and thermal specifications. Ensure that the SIP-10 package dimensions align with the target PCB footprint requirements. Confirm RoHS compliance status if environmental regulations apply to the specific manufacturing batch. Cross-reference the absolute maximum ratings with system operating conditions to prevent overstress during peak load scenarios.

Selection Notes

Select this component when a compact solution for multiple NPN switching functions is required. The integrated design reduces board space compared to discrete transistors. Consider the 25V breakdown voltage limit for low-voltage power applications. Evaluate the thermal management needs given the SIP-10 package constraints. Verify compatibility with existing drive circuitry due to the specific internal zener diode configuration.

Part Context

This component belongs to the PUB4422 series of silicon NPN triple diffusion planar type darlington transistors. It is designed specifically for power amplification tasks where high current gain and fast switching are critical. The series offers robust construction suitable for demanding electronic environments.